Quantitative determination of spin–orbit-induced magnetic field in GaMnAs by field-scan planar Hall measurements

Abstract Spin–orbit-induced (SOI) effective magnetic field in GaMnAs film with in-plane anisotropy has been investigated by planar Hall effect measurements. The presence of SOI was identified a shift between resistance (PHR) hystereses observed positive and negative currents. difference switching fields occurring the two current polarities, which is determined strength field, shown to depend on external direction. In this paper we have developed method for obtaining magnitude based free energy that includes effects field. Using approach, given density accurately obtained fitting dependence applied directions. Values scan PHR measurements give results are consistent those analyzing angular PHR, indicating reliability quantifying SOI-field films. systematically increases increasing density, demonstrating usefulness manipulation magnetization